Picosecond ultralow-power switching device based on an antiferromagnet
Summary
Developing an ultrafast and energy-efficient nonvolatile switching device may pose a strong impact on emerging computing architectures. However, processing speed has plateaued in the nanosecond regime, as further acceleration demands excessively large write power. We demonstrate ultralow power in picosecond switching using heterostructures of the antiferromagnet Mn3Sn and heavy metal tantalum, which exhibit spin-orbit torque switching by electrical pulses as short as 40 picoseconds. Power
Content
# Picosecond ultralow-power switching device based on an antiferromagnet
*Published: 2026 May 14*
Developing an ultrafast and energy-efficient nonvolatile switching device may
pose a strong impact on emerging computing architectures. However, processing
speed has plateaued in the nanosecond regime, as further acceleration demands
excessively large write power. We demonstrate ultralow power in picosecond
switching using heterostructures of the antiferromagnet Mn3Sn and heavy metal
tantalum, which exhibit spin-orbit torque switching by electrical pulses as
short as 40 picoseconds. Power consumption in the picosecond regime is several
orders of magnitude lower than in ferromagnetic counterparts owing to efficient
angular momentum transfer. Compared with previously reported picosecond
switching devices, our ultralow-power switching device realizes much less
heating, higher endurance, and switching using photocurrent. These results pave
the way to ultrafast nonvolatile memory and efficient optical-to-electrical
conversion technology.
DOI: 10.1126/science.adt3136