Highly efficient, deep-ultraviolet luminescence in hBN moiré quantum wells
Summary
Twisted stacking of two-dimensional van der Waals (vdW) semiconductors creates moiré superlattices, which provides unprecedented control over quantum states and their light-matter interactions. We demonstrate that a simple twist interface between two single-crystalline bulks of hexagonal boron nitride (hBN) creates moiré quantum wells (QWs) embedded in a three-dimensional vdW structure. hBN moiré QWs strongly confine charge carriers under both optical excitation and electrical injection. D
Content
# Highly efficient, deep-ultraviolet luminescence in hBN moiré quantum wells
*Published: 2026 Mar 19*
Twisted stacking of two-dimensional van der Waals (vdW) semiconductors creates
moiré superlattices, which provides unprecedented control over quantum states
and their light-matter interactions. We demonstrate that a simple twist
interface between two single-crystalline bulks of hexagonal boron nitride (hBN)
creates moiré quantum wells (QWs) embedded in a three-dimensional vdW structure.
hBN moiré QWs strongly confine charge carriers under both optical excitation and
electrical injection. Despite their indirect bandgap, they emit intense
deep-ultraviolet luminescence in the extreme wavelength bands from 215 to 240
nanometers, exceeding that of state-of-the-art conventional aluminum gallium
nitride (AlGaN) multiple QWs by more than an order of magnitude. Furthermore,
the twist angle control allows wide tunability of luminescence energy and
efficiency in moiré QWs.
DOI: 10.1126/science.aeb2095