High-temperature memristors enabled by interfacial engineering
Summary
Nonvolatile memories (NVMs) that operate reliably at high temperatures are essential for electronics in extreme environments. Here, we report graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700°C, with an ON/OFF current ratio of >103, data retention >50 hours, and endurance >109 switching cycles. Transmission electron microscopy revealed substantial W diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W memristors after high-temperature anneal
Content
# High-temperature memristors enabled by interfacial engineering
*Published: 2026 May 14*
Nonvolatile memories (NVMs) that operate reliably at high temperatures are
essential for electronics in extreme environments. Here, we report graphene
(Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700°C, with an
ON/OFF current ratio of >103, data retention >50 hours, and endurance >109
switching cycles. Transmission electron microscopy revealed substantial W
diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W
memristors after high-temperature annealing, which was responsible for the
thermal failure in conventional devices but not observed in Gra/HfOx/W devices.
First-principles calculations attributed the enhanced thermal stability to
weaker W adsorption and higher surface diffusion barriers on Gra compared with
metals such as Pt. These results underscore the critical role of interfacial
engineering and the potential of two-dimensional materials for enabling reliable
high-temperature NVM technologies.
DOI: 10.1126/science.aeb9934